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High‑K Precursor

Applied in CVD and ALD thin‑film deposition for memory and logic chips.

High‑K Precursor

High‑k (high‑dielectric‑constant) precursors are mainly used in semiconductor manufacturing processes at 45 nm and below. They are applied in CVD and ALD thin‑film deposition technologies for memory and logic chips to form capacitor dielectrics or gate dielectrics in integrated circuits. The materials address device scaling‑down and leakage‑current issues, reduce leakage current to around one‑tenth of that of conventional processes, and greatly improve product yield.

OMG261 ALP081 HfCl₄

Application Scenarios

With high‑reaction‑activity, low‑impurity characteristics and excellent thin‑film quality, it serves as a critical material for advanced‑node processes of logic chips and DRAM devices. It is adopted in Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) to fabricate metal‑oxide thin‑films.

Product Information

A metal precursor for preparing high‑dielectric‑constant thin‑films.

Application scenarios

Featuring high‑reactivity, low‑impurity content and superior thin‑film quality, it is a key material for advanced‑node processes of logic chips and DRAM devices. It is deployed in Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) to form metal‑oxide thin‑films.

Product Information

A metal precursor used for the fabrication of high‑dielectric‑constant thin‑films.

Application scenarios

Applied in advanced‑node chip manufacturing processes (28 nm and below), primarily for HfO₂ deposition of high‑K gate stacks.

Product Information

Hafnium tetrachloride, a metal precursor for fabricating high‑dielectric‑constant thin‑films.

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Metal‑based Precursors

Primarily used for thin‑film deposition in integrated‑circuit manufacturing.

Metal‑based Precursors

They are mainly used for thin‑film deposition processes in integrated‑circuit manufacturing (e.g. CVD‑Chemical Vapor Deposition, ALD‑Atomic Layer Deposition), to form metal‑gate oxide layers or copper interconnect structures, and serve as critical materials for advanced‑node processes such as FinFET.

TMA AlCl3

Application Scenarios

Adopted in Atomic Layer Deposition (ALD) processes to fabricate aluminum‑nitride and aluminum‑oxide thin‑films. It serves as a critical precursor for passivation and dielectric layers of semiconductor devices.

Product Information

Trimethylaluminum, chemical formula: C₃H₉Al, a metal‑based precursor material.

Application scenarios

It is mainly used in Atomic Layer Deposition (ALD) processes. High‑purity aluminum‑oxide thin‑films can be deposited via surface‑self‑limiting reactions with alternating pulses of water or oxygen plasma.

Product Information

Aluminum Chloride, a metal precursor material for fabricating aluminum‑compound thin‑films.

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Silicon‑based Precursors

Mainly adopted for the growth and doping of silicon‑based semiconductor materials.

Silicon‑based Precursors

Precursors with silicon as the main component, mainly used for the growth and doping of silicon‑based semiconductor materials.

BDEAS HCDS

Application Scenarios

Used for depositing silicon‑dioxide thin‑films via CVD in integrated‑circuit manufacturing, for processes such as isolation layers, inter‑layer dielectrics and passivation films.

Product Information

Tetraethyl Orthosilicate (TEOS), a core silicon‑source precursor for silicon‑dioxide thin‑films.

Application Scenarios

Suitable for low‑temperature silicon‑oxide deposition via ALD/CVD, meeting the gap‑fill requirements of thin‑films in high‑aspect‑ratio structures.

Product Information

Bis(diethylamino)silane (BDEAS), an amino‑based silicon precursor for low‑temperature processes.

Application Scenarios

Deposits high‑quality silicon‑oxide and silicon‑nitride thin‑films via low‑pressure, low‑temperature CVD processes. It serves as a critical silicon source to replace silane and dichlorosilane in advanced‑node manufacturing.

Product Information

Hexachlorodisilane (HCDS), a highly‑active chlorosilane precursor for dielectric thin‑films in DRAM and 3D‑NAND devices.

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