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1

Anti‑Reflective Coating (ARC)

Coating material for advanced photolithography processes to reduce standing‑wave effects.

Anti‑Reflective Coating (ARC)

Anti‑Reflective Coating (ARC) refers to coatings applied beneath or on top of photoresist. It consists of polymer resin, thermal acid generator, cross‑linker, functional additives, solvent and other components. As a general term for various anti‑reflective coatings, it covers Si‑ARC, BARC, TARC and other products.

TARC Si-BARC BARC

Application Scenario

TARC is normally spin‑coated on top of the photoresist layer to suppress surface reflection at the photoresist‑air interface.

Product Information

Top Anti‑Reflective Coating (TARC): an anti‑reflective coating applied on the top surface of photoresist.

Application Scenario

It is mainly applied for technology nodes below 45 nm, and used in combination with low‑temperature spin‑on‑carbon materials and photoresists.

Product Information

Silicon‑containing Anti‑Reflective Coating (Si‑ARC), one of the photolithography materials adopted in three‑layer photolithography processes.

Application Scenario

BARC is coated beneath the photoresist to suppress upward‑reflected light from the substrate, eliminate the standing‑wave effect and improve pattern imaging quality.

Product Information

Bottom Anti‑Reflective Coating (BARC): an anti‑reflective layer applied underneath photoresist. It is generally classified by working wavelength into i‑Line BARC, KrF BARC and ArF BARC. By function, it can be divided into anti‑reflective BARC, high‑etch‑rate BARC, planarization BARC, gap‑fill BARC, etc.

2

Spin‑On‑Carbon (SOC)

Spin‑on carbon coating material serving as a hard‑mask layer for advanced multi‑film photolithography processes.

Spin‑On‑Carbon (SOC)

High-temperature SOC Low-temperature SOC

Application scenarios

It is adopted in the manufacturing of‑advanced NAND, DRAM memory and advanced logic chips. As a critical layer for high‑resolution and multi‑exposure patterning requirements, it functions as the under‑layer gap‑fill material and hard mask.

Product Description

It delivers excellent trench and hole‑filling capability together with high etch selectivity, with a minimum fillable gap size below 20 nm. Its carbon content ranges from 80% to 90%, and the high‑temperature‑grade product can withstand operating temperatures up to 400 °C.

Application scenarios

It is mainly applied to the lithography process of logic chips at 45 nm and below technology nodes.

Product Information

It delivers excellent trench and hole‑filling capability together with high etch selectivity, with a minimum fillable gap size below 20 nm. Its carbon content ranges from 70% to 85%, and the high‑temperature‑grade product can withstand operating temperatures up to 400 °C.

3

ArF Photoresist

Photoresist designed for 193 nm argon‑fluoride (ArF) exposure source.

ArF Photoresist

This type of photoresist uses an argon‑fluoride (ArF) exposure light source at a wavelength of 193 nm, also known as ArF photoresist. It can be further divided into dry ArF photoresist and immersion ArF photoresist. The refractive medium for the dry process is air, while water serves as the refractive medium for the immersion process. Both are primarily applied in the field of integrated circuits.

Immersion ArF photoresist Dry ArF photoresist

Application Scenario

Immersion ArF Photoresist

Product Information

Immersion ArF photoresist adopts immersion lithography, optical proximity correction and other resolution‑enhancement technologies, and is compatible with multi‑exposure processes.

Application Scenario

Applicable to technology nodes ranging from 90 nm to 45 nm.

Product Information

It is a deep‑ultraviolet photoresist matched with 193 nm exposure wavelength and exposed under air or nitrogen atmosphere, suitable for process nodes from 90 nm to 45 nm.

4

KrF photoresist

Photoresist designed for 248 nm krypton‑fluoride (KrF) exposure source.

KrF photoresist

It meets application requirements for film‑thickness ranging from several micrometers down to 0.2 μm. Among them, high‑resolution KrF photoresist achieves a limiting resolution of 120 nm for 1:1 line‑and‑space patterns, with a depth‑of‑focus greater than 0.3 μm at an exposure latitude of 10%.

5

i‑Line Photoresist

UV‑sensitive photoresist matched to 365 nm exposure wavelength.

i‑Line Photoresist

With an exposure wavelength of 365 nm, the application of chemical amplification technology can greatly improve the sensitivity of photoresist while maintaining a relatively high resolution (<0.30 μm).

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